High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
![PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation](https://www.researchgate.net/profile/Yiding-Lin/publication/343048911/figure/fig4/AS:918793463283712@1596068840763/a-The-dark-current-density-voltage-J-dark-V-characteristic-of-the-annealed-GOI_Q320.jpg)
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
![Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2Fs43580-022-00364-6/MediaObjects/43580_2022_364_Figa_HTML.png)
Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink
![Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2Fs43580-022-00364-6/MediaObjects/43580_2022_364_Fig1_HTML.png)
Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink
![Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink](https://media.springernature.com/w136h75/springer-static/image/art%3A10.1134%2FS1063782619120030/MediaObjects/11453_2020_2575_Fig1_HTML.gif)
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
![PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation](https://www.researchgate.net/profile/Yiding-Lin/publication/343048911/figure/fig3/AS:918793463271425@1596068840732/a-The-XPS-spectra-of-Al-2-O-3-GeO-x-structure-before-and-after-the-O-3-oxidation-b_Q320.jpg)
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
![Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink](https://media.springernature.com/w136h75/springer-static/image/art%3A10.1007%2Fs11082-018-1717-4/MediaObjects/11082_2018_1717_Fig1_HTML.png)
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
![PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation](https://www.researchgate.net/profile/Yiding-Lin/publication/343048911/figure/fig1/AS:918793463287809@1596068840592/a-Cross-sectional-transmission-electron-microscope-TEM-image-of-the-annealed_Q320.jpg)
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
![Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2Fs43580-021-00188-w/MediaObjects/43580_2021_188_Fig2_HTML.png)
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
![Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1557%2Fs43580-021-00188-w/MediaObjects/43580_2021_188_Fig1_HTML.png)
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
![PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures](https://i1.rgstatic.net/publication/257841148_Anomalous_temperature_dependence_of_photoluminescence_in_GeO_x_films_and_GeO_x_SiO2_nano-heterostructures/links/552503ac0cf22e181e73bd2a/largepreview.png)